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Abstract
An indium-induced one-dimensional (1D) surface reconstruction on a Si(557) surface was studied by the combined approach of scanning tunneling microscopy (STM) and first principles calculations. Low-energy electron diffraction revealed a (1×3) phase with a triple-period along the step edge direction, which was also confirmed by STM. The STM images showed that the 1D structure consists of two atomic chains. One is located on the terrace and consists of triple-period bright protrusions. The other shows a weak ×3 modulation at the step edge. Five atomic structure models based on the In adatom of a In/Si(111)- surface were considered to figure out the underlying structure of the STM images of the In/Si(557)-1×3 surface. Interestingly, a heterogeneous In–Si adatom chain model reproduced most of the features of STM images and was the most stable energetically at a wide range of In chemical potential.
Highlights
MofoaduInla/tSioi(n1a1t1t)h-e√s3te×p e√d3ges.uFrifvaeceatwomeriec structure models based on the In adatom considered to figure out the underlying structure of the scanning tunneling microscopy (STM) images of the In/Si(557)-1 × 3 surface
lowenergy electron diffraction (LEED) patterns were obtained with increasing annealing temperature after room temperature (RT) In adsorption above 1 ML
The ×7 LEED pattern of a clean Si(557) surface was changed to a diffuse ×1 LEED pattern after the RT In adsorption
Summary
The experiments were performed in an ultrahigh vacuum chamber equipped with commercial variable-temperature scanning tunneling microscopy (STM) (Omicron, Germany) and lowenergy electron diffraction (LEED). I1×3/I1×4 was 0.12 ± 0.01, which suggests that In coverage of the In/Si(557)-1 × 3 surface is 0.12 ± 0.01 ML Both the In/Si(557)-1 × 3 and In/Si(111)-4×1 surfaces form within a finite range of In coverage. The error range of In coverage, should be larger than that calculated by the mathematical analysis. This leads to the conclusion that In coverage of the In/Si(557)-1 × 3 surface is 0.12 ± 0.07 ML. A slab geometry in an orthorhombic unit cell was used to describe the Si(557) surface, where the surface area was 19.2 × 3.84 Å2 for the (1 × 1) unit cell. A simulated STM image was calculated using the method proposed by Tersoff and Hamann [30]
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