Indium tin oxide thin films prepared by chemical vapour deposition

Abstract

Transparent conductive indium tin oxide thin films were prepared by an atmospheric pressure chemical vapour deposition method without using an oxygen donor. The raw materials were indium 2-ethylhexanoate and tin(IV) chloride, which are inexpensive and easy to handle. Polycrystalline films were obtained at a reaction temperature of 400°C. The tin content in the film is adjustable by changing the ratio of the flow rate of the carrier gas. For a 430 nm thick film deposited at 400°C, the resistivity was 2.9×10 −4 Ω cm , and the transmittance was more than 80% in the wavenumber range above 550 nm. The effects of tin doping on the structure and characteristics of the film are discussed by comparing the results with the corresponding values for non-doped indium oxide film.