Abstract
We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of ∼4.6 × 10−4 Ω cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of ∼1.21 × 1021 cm−3 and a lower mobility of ∼11.4 cm2 V−1 s−1. More interestingly, these electrical characteristics result in the semiconductor–metal conductivity transition around room temperature for the ITO films prepared by APA.
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