Abstract
We have studied the effects of As 4 flux intensity during crystallization process and sample temperature during annealing process on the structural and optical properties of InGaAs (quantum dots) QDs fabricated by heterogeneous droplet epitaxy method. The QDs formation mechanism including In segregation and InAs–GaAs intermixing was investigated. We found the very wide optimum growth conditions, such as photoluminescence peak energy is constant, intensity is maximum value and full-width at half-maximum is minimum value.
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