Indium phosphide (InP) colloidal quantum dot based light-emitting diodes designed on Flexible PEN substrate

Yohan Kim,Christian Ippen,Armin Wedel,Jiwan Kim,Tonino Greco

doi:10.1109/inec.2013.6466067

Indium phosphide (InP) colloidal quantum dot based light-emitting diodes designed on Flexible PEN substrate

Yohan Kim, Christian Ippen + Show 3 more

https://doi.org/10.1109/inec.2013.6466067

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Publication Date: Jan 1, 2013

Citations: 13

Affiliation: Korea Electronics Technology Institute, Fraunhofer Institute for Applied Polymer Research

#Polyethylene Naphthalate Substrate #Polyethylene Naphthalate + Show 8 more

Abstract
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Abstract

Quantum dot light-emitting diodes (QD-LEDs) using InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) which were prepared by simple heating-up method were designed on polyethylene naphthalate (PEN) substrate for rugged optoelectronic device. The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45%. The maximum luminance and current efficiency of InP based QD-LEDs fabricated on PEN substrate reached 640 cd/m2 and 1.0 cd/A.

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