Abstract

Quantum dot light-emitting diodes (QD-LEDs) using InP/ZnSe/ZnS muitishell colloidal quantum dots (QDs) which were prepared by simple heating-up method were designed on polyethylene naphthalate (PEN) substrate for rugged optoelectronic device. The synthesized InP/ZnSe/ZnS multishell QDs exhibited an emission peak at 545 nm for clear green color with a full-width at half-maximum (FWHM) of 50 nm, and photoluminescent (PL) quantum yield (QY) of 45%. The maximum luminance and current efficiency of InP based QD-LEDs fabricated on PEN substrate reached 640 cd/m2 and 1.0 cd/A.

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