Abstract
In this paper, the performance of cubic InP/InyGa1 − yAs DG MOS-HEMTs, has been discerned by studying the gate geometries’ effects on the breakdown voltage, subthreshold slope and maximum cut-off frequency owing to varying doping concentrations. After a meticulous simulation, the breakdown voltage was found out to be 1417 V. The proposed InP/InGaAs based HEMT exhibits subthreshold slope of 63.9 mV/decade. The unity gain frequency (ft) is found to be 113 GHz and is constant for 1 V < Vds < 2.5 V, while maximum frequency fmax = 216 GHz for Vds = 7 V. To explore the reliability of the device under high gate and drain bias conditions, a profound study has been carried out.
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