Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

Abstract

The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth.