Abstract

AbstractLow‐bandgap mixed tin (Sn)‐lead (Pb) perovskite solar cells promise efficiency beyond the pure‐Pb ones. However, the difference in the interaction rate of SnI2 and PbI2 with organic salts causes spatial distribution heterogeneity of Sn2+ and Pb2+ in mixed Sn─Pb perovskite layers. This causes a Sn‐rich surface, which can trigger more severe Sn2+ oxidation and nonradiative recombination. A strategy, of introducing indium ion (In3+) into the perovskite precursor solution to compete with Sn2+ when reacting with organic salts is developed. Therefore, the nucleation and crystallization of perovskite films are well‐controlled, leading to improved film quality with a more balanced Sn/Pb ratio on the film surface. Additionally, In3+ has a lower reduction potential compared to Sn2+ which can generate an extra energy barrier for Sn2+ oxidation. The improved film quality and reduced surface oxidation result in accelerated electron transfer and reduced carrier recombination rate. The modified devices achieve a power conversion efficiency (PCE) of 23.34%, representing one of the highest PCEs in mixed Sn─Pb solar cells made with PCBM.

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