Abstract
Experimental data on indium incorporation in InGaN and InAlN layers grown by metalorganic chemical vapor epitaxy (MOVPE) on bulk GaN substrates are presented and discussed. For the step-flow growth mode, realized for InGaN layers grown at relatively high temperatures (around 800°C), incorporation of indium increases with growth rate, and similarly, with a decrease in GaN substrate misorientation. Both dependences are explained by a higher velocity of flowing steps incorporating the indium atoms. For InAlN layers, three-dimensional nucleation takes place, and thus no significant changes of indium incorporation versus either growth rate or GaN substrate misorientation were observed.
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