Abstract
Atomic layer deposition (ALD) followed by microwave hydrothermal processing was successfully employed for producing doped and vertically aligned ZnO nanorod arrays with different aspect ratio. Firstly, a textured ZnO layer with preferential orientation normal to the c-axis was formed on substrate (1 1 1) silicon single crystals by means of the ALD technique. This was achieved through the decomposition of diethylzinc at 190 °C and 3.289 × 10−4 atm, which provided an adequate template with nucleation sites, favoring further growth of vertical nanorods. Subsequently, nanorod array growth was produced on the same surfaces through solvothermal synthesis using as promoter a solution of Zn(NO3)2. In addition, growth of indium-doped ZnoO nanorods over the substrates was produced by using In(CH3COO)3 as a doping agent. The method presented allows good quality ZnO and Zn1−xInxO thin films to be obtained. Photoluminiscence spectra show clear evidence of the inclusion of indium in the ZnO matrix. The higher intensity ratio Zn0.96In0.4O/ZnO was increased 40-fold, demonstrating such an effect.
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