Abstract
Implantation of indium in silicon has attracted great interest for its possible applications in the microelectronics industry to produce ultra-shallow doped layers, however the very low solid solubility of the species makes it difficult to use. This paper presents a study of the effect of carbon co-implantation on indium solubility in silicon. After annealing for 1 h at 650 °C, it was found that increasing the amount of carbon in the layer results in an increase in the substitutional fraction of indium. Preliminary results via cross-section transmission electron microscopy show that the presence of carbon reduces the amount of clustered material.
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