Abstract
In this paper, design, properties, and fabrication of a novel indirect-coupling UV-sensitive photodetector (ICUP) are presented. It consists of a shallow p–n photoelectric conversion junction and an n–p–n output transistor. The ICUP features some advantages compared to phototransistors and photodiodes: a broader response spectrum, a lower noise, a higher responsivity and a shorter response time. The high responsivity in the UV region is achieved by a shallow p–n junction that works as active photoelectric conversion region. The dark current is two orders of magnitude smaller than that of the phototransistor fabricated using the same process. The ICUP also features an electrical gain of about 20. Under a bias voltage of 20 V, its response time reaches 750 ns, which is about three times shorter than that of the phototransistor.
Published Version
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