Abstract
In this issue of Joule, Lami et al. describe a method that enables UV photoemission spectroscopy (UPS) in the transverse dimension of polymeric semiconductor layers with nanometer-scale resolution. The approach is based on the use of Argon gas cluster ion beam (GCIB) etching instead of monoatomic ion bean bombardment. The use of GCIB reduces surface damage, enabling in depth UPS. The method is applied to the study of critical electronic levels and photovoltage in organic solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
