Abstract

Secondary Ion Mass Spectrometry (SIMS) and Auger Electron Spectroscopy (AES) have been used to determine the distribution of nitrogen in GaP ion implanted with nitrogen, and of nitrogen, oxygen, and fluorine ion implanted into silicon. The in-depth profile detectabilities for nitrogen in GaP are in the low 1018 atoms/cm3 range and upper 1019 atoms/cm3 range for SIMS and AES analyses, respectively. The in-depth profile detestability of SIMS for fluorine and oxygen is ~5x1016 and 1019 atoms/c.c.; AES in-depth detectability limits for oxygen and fluorine are in the 1020 atoms/c.c. range.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.