Abstract
Space-resolved x-ray diffraction measurements of gradient-etched CuIn1−xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter of CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact, is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). The band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.
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