Abstract
Flexibly controllable threshold voltage ( V th) asymmetric gate oxide thickness ( T ox) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO 2 or SiON or SiO 2) and slightly thick V th-control-gate oxide (thick SiO 2+drive-gate oxide) have been successfully incorporated into the 4T-FinFETs by utilizing the ion-bombardment-enhanced etching of SiO 2. It was experimentally confirmed that, all the asymmetric T ox 4T-FinFETs give the significantly improved subthreshold slope and thus gain higher on-current as compared to the symmetric one. Simulation results showed that the asymmetric T ox 4T-FinFETs are advantageous even in 20-nm-gate-length region.
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