Abstract
The number density of dangling bonds (spin density) and the hydrogen content as well as the hydrogen-bonding configuration were independently controlled in the glow-discharge hydrogenated amorphous Si-Ge alloys using a cathode-heating technique. A tentative mechanism is presented in terms of the top surface process as well as the growth zone.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
