Indentation-induced stress distribution and pressure effect on the resistivity of YSZ

Abstract

Ionic conductivities measured under GPa-order high pressure provide various information about ion hopping mechanisms such as the activation volume (ΔV). Traditionally, anvil cells have been used for high-pressure measurements. We previously reported a new method for high-pressure impedance measurements, up to a few GPa, employing an indentation-induced local stress field. In this method, both mechanical and electrical (Young's modulus and high pressure impedance) properties can be obtained simultaneously. However, in this method, high pressures are induced only around the tip of the indenter, and such stress distribution should be considered for the estimation of ΔV accurately. In the present study, employing a finite element method (FEM) calculation, the stress distribution around the tip of the indenter, and effects of such GPa-order high pressures on the O2− ion conduction of Y2O3-doped zirconia (YSZ) are shown.