Abstract

A new method for the thermal stabilization of parameters of devices employing magnetostatic waves (MSWs) in ferrite films is proposed. The method is based on the dependence of the temperature coefficient of frequency on the magnetizing field orientation relative to the crystallographic axes of the film. Possibilities of the new method are demonstrated for the iron yttrium garnet films, the properties of which allow the thermal stability of frequency-selective MSW devices to be significantly improved.

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