Increasing the range of growth temperatures available for GaAs selective area growth using triisopropylgallium and arsine

Abstract

This paper reports the first assessment of triisopropylgallium (TIPGa) for the selective area growth of GaAs using chemical beam epitaxy. Modulated beam mass spectrometry has been used to study the decomposition of TIPGa on oxides of silicon and GaAs, with both pre-cracked arsine and tris(dimethylamino)arsenic (TDMAAs) as the group V source. Experiments have been performed as a systematic function of growth temperature, both with and without the group V flux, and a comparison made with the use of triethylgallium (TEGa) in place of TIPGa. Using pre-cracked arsine as the group V source, we have demonstrated that TIPGa does not decompose on a silicon oxide surface for all growth temperatures above 450°C, whereas temperatures over 560°C are required to achieve total selectivity when using TEGa as the group III source. Studies using TIPGa and TDMAAs also demonstrate selectivity across a wide temperature range.