Abstract
Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping
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https://doi.org/10.1007/s00339-022-05862-w
Journal: Applied physics | Publication Date: Jul 20, 2022 |
Increasing of the ON-state current of 5.1 nm MoTe2 in-plane Schottky barrier field-effect transistors by O-passivation and W-doping
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