Abstract
Two organic light-emitting diodes (OLEDs) using the hole current structures of 2:1 NPB:MoO3 5 nm/2:1 CBP:MoO3 5 nm/CBP and 2:1 NPB:MoO3 10 nm/CBP have been fabricated, where NPB and CBP stand for N,N′-bis-(1-naphthl)-diphenyl-1,1′-biphenyl-4,4′-diamine and 4,4′-N,N′-dicarbazole-biphenyl, respectively. Despite that 2:1 CBP:MoO3 is proven to be more resistive than 2:1 NPB:MoO3 via comparing the I–V characteristics of the hole-only devices, the former OLED using two p-doped layers shows significantly improved I–V characteristics over the latter one using a single p-doped layer, mostly because the whole barrier height for hole transport across the 2:1 NPB:MoO3/2:1 CBP:MoO3 and 2:1 CBP:MoO3/CBP interfaces in the former device is 0.22 eV smaller than that for hole transport across the 2:1 NPB:MoO3/CBP interface in the latter device. We provide a simple, effective method to enhance the hole current in OLEDs.
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