Increased mobility for layer-by-layer transferred chemical vapor deposited graphene/boron-nitride thin films

Abstract

Large-area chemical vapor deposited graphene/boron-nitride (G/BN) thin films are co-transferred layer-by-layer to silicon-di-Oxide (SiO2) substrates, and transistors are constructed and examined. Raman spectra and high resolution transmission electron microscopy imaging show films of high quality. The graphene/boron-nitride/SiO2 devices have a significantly increased peak electron/hole mobility of 3400/2200 cm2/Vs with a reduced effective doping density over reference graphene/SiO2 devices. The mobility dependence as a function of carrier density is compared with a physically based empirical model and is in agreement with the improvements due to a consistent reduction in the substrate induced phonon and impurity scattering and an improvement in the overall surface quality owed to the boron-nitride interlayer that separates the graphene from the SiO2. Large-area G/BN thin films are promising for future high performance thin film electronic devices.