Abstract
Diamond films were deposited onto untreated silicon substrates by d.c. plasma chemical vapor deposition. Ellipsometric monitoring was used to determine the nucleation density of diamond films. A nucleation density of 6×10 9 cm −2 was observed on untreated substrates as the result of increasing the discharge current to 1.0 A and the cathode temperature to 1400°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
