Abstract
We incorporated Mg into InZnO (MIZO) semiconductor thin films and fabricated metal–semiconductor–metal (MSM) UV photodetectors by the sol–gel method. The effects of incorporating Mg into IZO films on the electrical and UV photoresponse properties were investigated and photoconductive UV detectors were realized using IZO-based films. The Mg content ([Mg]/[In + Zn]) was varied from 0 to 20% in the resultant solutions. Each as-coated sol–gel film was preheated at 300 °C for 10 min and annealed at 450 °C for 2 h to form dense oxide films. Results showed that all as-prepared IZO-based films had an amorphous phase structure, displayed a flat surface, and exhibited a high visible transmittance (≥90.0%). We found that UV light illumination increased the photocurrents in all IZO-based films, and that MIZO photodetectors exhibited better photocurrent generation than pure IZO photodetectors. The 20% Mg-doped IZO photodetectors exhibited the highest Ilight-to-Idark ratio (8.57) and the highest percentage of sensitivity (756.9).
Published Version
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