Abstract
Raman scattering by local vibrational modes has been used to study the incorporation of Si in single δ-doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.
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