Incorporation of Mg in GaN grown by plasma-assisted molecular beam epitaxy

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We describe dramatically decreased Mg incorporation in GaN above a critical Mg flux. Secondary ion mass spectroscopy analysis showed a linear increase in Mg concentration up to a flux equivalent to 8.0×10−10 Torr beam equivalent pressure (BEP) and 1.6×10−9 Torr BEP at 550 and 615 °C respectively, beyond which the Mg incorporation was reduced by factors of 10 for 550 °C, and 2 for 615 °C. In a transition region between this critical flux and higher flux, a time dependent incorporation phenomenon was observed. An increase in the GaN growth rate was also observed in the presence of Mg above the critical flux.