Abstract
Diamond is a unique mineral widely used in diverse fields due to its remarkable properties. The development of synthesis technology made it possible to create diamond-based semiconductor devices. In addition, doped diamond can be used as single photon emitters in various luminescence applications. Different properties are the result of the presence of impurities or intrinsic defects in diamond. Thus, the investigation of the defect formation process is of particular interest. Although hydrogen, nitrogen, and boron have been known to form different point defects, the possibility for large impurity atoms to incorporate into the diamond crystal structure has been questioned for a long time. In the current paper, the paramagnetic nickel split-vacancy defect in diamond is described, and the further investigation of nickel-, cobalt-, titanium-, phosphorus-, silicon-, and germanium-related defects is discussed.
Highlights
Diamond has always attracted the interest of scientists due to its extraordinary properties, such as high hardness and thermal conductivity
The P1 and W8 centers were observed in the electron paramagnetic resonance (EPR) spectra of diamond crystals synthesized at a temperature of 1700 K and a pressure of 5.5 GPa
The analysis of the angular dependence of the EPR spectrum showed showed that it was characterized by an axial symmetry around and had the following that it was characterized by an axial symmetry around
Summary
Diamond has always attracted the interest of scientists due to its extraordinary properties, such as high hardness and thermal conductivity. The authors tried to establish the structural forms of nitrogen impurity defects in diamond. The maximum concentration of the nitrogen impurity in type I diamond detected by mass spectrometry was ~1020 cm−3. The main features of the single substitutional nitrogen defect in the IR absorption spectra are the peaks at 1130 and 1344 cm−1 [6,7]. The peaks at 1332 cm−1 , 1046 cm−1 , and 950 cm−1 in the IR absorption spectra were attributed to the positively charged substitutional nitrogen defect N+ [8]. It was found that A centers were formed by the aggregation of single nitrogen atoms. After high-temperature annealing, apart from the B centers, the paramagnetic P2 center is observed This center has electron spin S = 1/2 and the HFS of three equivalent nitrogen atoms. In the late 90s, it was assumed that only impurity atoms with small atomic radii formed point defects in diamonds
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