Incorporation of H into In x Ga 1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states

Abstract

Photoluminescence (PL) measurements have been performed on strained In xGa 1−xAs/GaAs (100) quantum well structures, as well as GaAs(100) and GaAs/Si (100) layers, subjected to post-growth hydrogenation. H incorporation leads to the observation of shallow H-related PL bands from the In xGa 1−xAs wells. For x = 0.09, these radiative states exhibit binding energies which vary from 22 meV (40Å well) to 15 meV (160Å well). Increasing the In content, to x = 0.16 and x = 0.20, results in a decrease of the effective binding energy observed for each shallow H-related PL transition. The dependence of H volume incorporation on both sample quality and temperature during implantation have been investigated by comparing material hydrogenated at 150°C and 300°C, using H doses of 10 17 and 5×10 18 ions/cm 2.