Abstract
Optimum strain compensation structures for In0.07GaAs-based MQWs were investigated to obtain a higher output power for infrared lighting-emitting diodes (IR-LEDs) requiring a 940 nm wave-length. A GaAsP0.06 tensile strain material for compensating the compressive strain of In0.07GaAs quantum wells was used as a quantum barrier. To improve upon the excessive unbalance strain condition caused due to the In0.07GaAs quantum well and GaAsP0.06 quantum barrier, a conditioned Al0.2GaAs strain balancing barrier was also investigated. Through subsequent photoluminescence (PL) measurements, it was found that the GaAsP0.06 tensile strain barrier could effectively compensate for the compressive strain of In0.07GaAs quantum wells. Furthermore, the PL intensity of In0.07GaAs/GaAsP0.06 MQWs was observed to be markedly improved by using an Al0.2GaAs strain balancing barrier. A fabricated IR-LED chip, having In0.07GaAs/GaAsP0.06 MQWs with an Al0.2GaAs strain balancing barrier, showed a 60% higher light output power than conventional MQWs. These results subsequently suggest that using GaAsP0.06 and Al0.2GaAs barriers effectively improved unbalanced strain conditions of lattice-mismatched In0.07GaAs based MQWs requiring a 940 nm emitting wavelength.
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