Abstract
Simple first generation Cu post-CMP cleaners, such as oxalic acid solutions, promote corrosion of Cu due to removal of BTA and dissolution of cuperous oxide (Cu2O). The use of simple organic acid solutions imposed a short staging time before processing wafers to the next level due to corrosion of the exposed Cu. In some cases, a maximum holding time of less than one hour was needed to reduce device yield loss and reliability issues resulting from Cu corrsion. A way to significantly increase the post-clean wafer holding time was by incorporating a Cu passivator into the post-CMP cleaner. Four commonly used Cu passivators were evaluated in a commercially available, alkaline, post-CMP cleaner. Several unanticipated properties were observed when using 1,2,4-triazole, which will be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
