Abstract
Sulphur doped InP has been grown by molecular beam epitaxy (MBE) using an electrochemical cell as a source of sulphur dimer S 2. At growth temperatures of over 500°C sulphur is lost from the layers as a volatile indium sulphide which desorbs with an activation energy of 4.5 eV. The concentration of incorporated sulphur ( C S ) is linearly proportional to the incident sulphur flux both at low ( T s < 500°C) and high ( T s > 500°C) growth temperatures, indicating first order kinetics of incorporation and desorption f sulphur. The desorption cannot be suppressed by increasing the P 2: In flux ratio. The desorption rate is also independent of the incident indium flux. A thermodynamic analysis shows that the most likely desorbing species is In 2S.
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