Abstract
TCAD simulations show the difference in the transient behavior and the capacitance-voltage characteristics of bulk and SOI FinFETs if the gate-voltage swing includes the accumulation region. This effect can be captured by a compact model of FinFETs only if it includes the contribution of both types of carriers in the Poisson-Boltzmann equation. An accurate implicit input-voltage equation valid in all regions of operation is proposed for double-gate FinFETs with intrinsic or lightly doped bodies. This results in a surface-potential-based compact model of FinFETs, which is valid in all regions of operation and is verified by comparison with TCAD simulations.
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