Abstract
A liquid phase epitaxy (LPE) technique for growing indium arsenide (InAs)based narrow-bandgap semiconductor compounds for thermophotovoltaic (TPV) applications has been developed. InAs-based multicomponent solid solutions and InAs/InAsSbP heterostructures with E g = 0.35–0.6 eV are promising materials for TPV converters that operate at an emitter temperature of 1000–2000°C. The sensitivity of new TPV elements is extended toward longer wavelengths (up to 3.8 μm), which ensures effective conversion of low-energy photons. The epitaxial films of quaternary InAsSbP solid solutions were obtained by LPE from a supercooled solution melt and by the liquid phase electroepitaxy technique with controlled doping of a growth solution from a single liquid source of components. The films have homogeneous compositions and highly perfect crystal structures. The values of reverse saturation currents in n-InAs/p-InAsSbP heterostructures are close to theoretical predictions.
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