Year-end Sale % OFF 
Abstract
A theoretical and experimental study of the electronic properties of InAsSb quantum dots (QDs) grown on InP substrate is presented. Unstrained bulk InAsSb presents a direct gap between 0.1 eV to 0.35 eV, suitable for mid infrared emitters (3–5 µm). However, strain and quantum confinement effects may limit the extension of the emission spectrum of these nanostructures towards longer wavelengths. Various combinations of barrier materials are considered in the simulations. First photoluminescence spectroscopy experiments on molecular beam epitaxy (MBE) grown samples show promising results. Triple stacks of InAs QDs embedded in a GaInAsP alloy lattice matched to InP and grown by the Stranski-Krastanov mode exhibit room temperature (RT) luminescence at about 2 µm. Emission wavelengths as long as 2.35 µm have been observed at RT in a InAsSb/InGaAs/InP structure. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
