Abstract
Theoretical and experimental studies of the electronic properties of InAs(Sb) quantum dots (QDs) grown by molecular beam epitaxy (MBE) on InP(100) substrate are presented. Eight‐band k⋅p calculations including strain and piezoelectric effects are performed on InAs/InP(100) quantum dot (QD) structure to study the influence of the quantum dot height. Photoluminescence (PL) spectroscopy experiments show promising results. High arsine flow rate during the growth of InAs QDs makes possible long emission wavelength beyond 2 μm. Emission wavelength as long as 2.35 μm is observed with InAsSb QDs.
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