Abstract
The electronic band-structure and optical gain properties of dilute-nitride InAsN/GaSb/InAsN type-II ‘W’ quantum wells based mid-infrared laser diodes on InAs substrate are numerically investigated with an accurate 10-bands kp model. The laser diodes are designed to operate at 3.3 µm at room temperature. The dispersion relations, the optical gain and the threshold current density including computation of non-radiative Auger recombination rate are calculated. For typical injected carrier concentration of 1.5 × 1018 cm−3 at 300 K, peak gain values of the order of 1000 cm−1 are reached and a modal gain value equal to 70 cm−1 can be achieved. By evaluating reasonable optical losses, a threshold current density around 500 A cm−2 is expected, showing that dilute-nitride InAsN/GaSb/InAsN ‘W’ quantum wells are suitable for mid-infrared laser operation at room temperature.
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