InAs Quantum Well Transistors for High-Speed Low Power Applications

Abstract

An Indium Arsenic based quantum well field-effect transistors (QWFETs) with 80 nm gate length have been fabricated and evaluated for high speed and low DC power applications. The device exhibits high drain current density (1015 mA/mm), high transconductance (1920 mS/mm) and excellent RF performance (fT = 393 GHz), current gain cutoff frequency (fT), at an operating supply voltage of only 0.5 V. As for the gate delay time, the device shows a very low value of 0.54 psec at the VCC of 0.5 V. The InAs transistors demonstrate higher fT than silicon NMOS transistors while consuming smaller active power, indicating its great potential in next generation low power logic applications.