Abstract
Narrow InAs-base GaSb/InAs hot-electron transistors have been grown by low-pressure metalorganic chemical vapor deposition. The InAs bases are 30, 50, and 100 Å thick. The ground-state electron subband energy E0 is determined from values of collector current. For thinner wells, values of E0 are well explained by a simple effective mass calculation. Here, a mixing of InAs conduction-band states with GaSb valence-band states is neglected because of symmetry mismatch. The effect of nonparabolicity of the InAs conduction band is taken into account.
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