InAs quantum emitters at telecommunication wavelengths grown by droplet epitaxy

Abstract

InAs quantum dots at telecommunication wavelengths are desired as single-photon sources, but a growth technique that enables wide control over quantum dot size, density, and morphology is needed. Droplet epitaxy is well suited for this purpose, but InAs nanostructures tend to form as rings on (001) InGaAs, InAlAs, and InP surfaces. In this work, we investigate how surface diffusion can be manipulated to grow quantum dots by molecular beam epitaxy without using high-index substrates or metamorphic buffers. First, surface diffusion characteristics of In on In0.52Al0.48As are compared to In and Ga on In0.53Ga0.47As. Then, a two-step arsenic exposure protocol is applied to modify the droplet crystallization step, resulting in a series of different nanostructure morphologies that have narrow-linewidth emission between 1200 and 1520 nm at 4 K. Ultimately, we show that controlling surface diffusion of the group-III species during growth is critical for achieving quantum dots appropriate for single-photon sources at telecommunication wavelengths.