Abstract
This work reports on InAs quantum wells (QWs) grown on GaAs-based metamorphic In0.83Al0.17As buffers for type-I mid-infrared (MIR) emission. X-ray diffraction and Raman measurements show that the GaAs-based quantum wells have similar lattice and strain conditions with the InP-based structure. Atomic force microscope shows the smoother surface of the structure on GaAs substrate. For the GaAs-based quantum wells, favorable photoluminescence emission at 2.9 μm at 300 K has been achieved, and the optical quality is comparable to the structure on InP substrate. It is promising to employ this metamorphic quantum well structure for the demonstration of GaAs-based antimony-free mid-infrared lasers.
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