InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

Abstract

With a chirped InAs/GaAs SML-QD (quantum dot) structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970 nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800 mA, an output power of 18.5 mW, and the single Gaussian-like emission spectrum centered at 972 nm with a full width at half maximum of 18 nm are obtained.