Abstract
InAs/GaAs(001) quantum dots are grown at high temperature and extremely low flux and analyzed by in situ scanning tunneling microscopy. A bimodal distribution of dots is observed, composed of “small” and “large” islands. While the former show a broad distribution of sizes and shapes, the latter appear to be highly uniform and have a truncated pyramid shape with irregular octagonal base. (110) and (111) facets are identified and atomically resolved showing (1×1) and (2×2) surface reconstructions, respectively. The shape of the large quantum dots is in excellent agreement with recent theoretical predictions, proving that the chosen deposition conditions are close to thermodynamic equilibrium.
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