Abstract
Cross-shaped Hall sensors with high sensitivity and excellent temperature stability were fabricated from quantum wells based on an InAs/Al0.2Ga0.8Sb heterostructure. The layers were grown on semi-insulating GaAs substrates by molecular beam epitaxy. Maximum Hall mobilities of 215 000 cm2/V s with sheet carrier concentrations of 9×1011 cm−2 were measured at 4.2 K for an undoped quantum well structure. These transport properties result in sensitivities as high as 3 T−1 (for voltage drive) and 650 Ω/T (for current drive). Additional Si δ doping in the middle of the InAs quantum well leads to a highly improved temperature stability of the sensitivities.
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