InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm

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Asymmetric n-InAs/InAs(1 – y)Sby/p-InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.