Abstract
We report on the growth of InAlGaP-layers and the fabrication of red microcavity LEDs (MCLEDs) on germanium (Ge) substrates. High-quality InAlGaP-layers have been grown on 3″ Ge-substrates with excellent uniformity on photoluminescence wavelength and intensity. InAlGaP MCLEDs with an Al 0.55Ga 0.45As current spreading layer and 200 μm device diameter, emitting at 650 nm exhibit a maximum quantum efficiency of 4.35% at 10 mA and a maximum optical power of 5 mW at 80 mA. MCLEDs emitting at 638 nm exhibit a maximum quantum efficiency of 4% at 10 mA and an optical power of 5 mW at 100 mA. GaP as an alternative current spreading layer is also investigated.
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