Abstract
The dependence of doping and alloy composition in InGaAs/InAlAs double-quantum-well resonant interband tunnel diodes (TDs) for static random access memory (SRAM) applications is explored. The peak current density is shown to vary by 5 orders of magnitude as the effective doping density is varied by a factor of 5. The reasons for this dependence are determined by characterization and analysis of current-voltage-temperature and capacitance-voltage measurements. This paper demonstrates a low-current bistable TD pair for SRAM with peak current density of 4 nA/μm2, peak-to-valley current ratio of 14, and peak voltage of 0.05 V enabling static binary storage at a supply voltage as low as 0.25 V.
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