Abstract
InGaAs channel FinFETs with self-aligned molybdenum (Mo) contacts was demonstrated using a gate-last process. By realizing Mo contacts on in situ doped n++ InGaAs source and drain and self-aligned to channel, the FinFETs achieved series resistance of ∼250Ωμm, which is the lowest value reported-to-date for InGaAs non-planar n-MOSFETs. A FinFET with channel length of 500nm and equivalent oxide thickness (EOT) of 3nm has an on-state/off-state current ratio of ∼105 and peak extrinsic transconductance of 255μS/μm at drain voltage of 0.5V. To further reduce EOT, atomic-layer-deposited HfO2/Al2O3 high-k dielectric was integrated in InGaAs FinFETs. Good interface quality and small EOT of ∼1nm were achieved. Forming gas annealing (FGA) was used for drive current enhancement. A 300°C 30min FGA leads to ∼48% increase in drive current as well as significant reduction of subthreshold swing, probably due to an improvement of the HfO2/Al2O3/InGaAs interface quality.
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