Abstract
This letter presents a remote NH3/N2 plasma treatment after gate oxide deposition for improving the electrical characteristics and the reliability of In0.53Ga0.47As FinFET. The plasma treatment enhanced drive current ( ${I}_{\textsf {DS}}$ ), transconductance ( ${G}_{m}$ ), subthreshold swing (SS), flicker noise, and positive bias temperature lifetime, suggesting that this plasma treatment significantly improves the quality of the etched In0.53Ga0.47As channel interface. In0.53Ga0.47As FinFETs and gate-all-around FETs were fabricated with the proposed in situ remote-plasma treatment and characterized.
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