Abstract
Strained-layer quantum wells of different thicknesses are realized in the form of an n-Al0.25Ga0.75As/InxGa1 – xAs/GaAs pseudomorphic heterostructure. The structural properties of the quantum wells are determined by high-resolution double-crystal XRD and by photoluminescence spectroscopy. The depth profile of In mole fraction is derived from the rocking curves. It indicates that the quantum-well interfaces are strongly smeared and hence their In mole fractions are less than the target value, 0.19. The XRD data are compared with the photoluminescence ones.
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